Method of manufacturing a ceramic electronic component

ABSTRACT

A ceramic electronic component includes a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked and an external electrode provided on a portion of a surface of the stack and electrically connected to the internal electrode. The external electrode includes an inner external electrode covering a portion of the surface of the stack and including a mixture of a resin component and a metal component and an outer external electrode covering the inner external electrode and including a metal component. A volume occupied by the resin component in the inner external electrode is within a prescribed range.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a ceramic electronic component and amethod of manufacturing the same.

Description of the Related Art

Ceramic electronic components represented by stack ceramic capacitorshave recently been used in an environment that is more severe than in aconventional example.

For example, electronic components included in mobile devices such as aportable telephone and a portable music player are required to beresistant to shock at the time of a drop. Specifically, electroniccomponents are required not to be detached from amounting board and tobe free from cracks when a drop impact is applied thereto.

Electronic components included in car-mounted devices such as an ECU(Engine Control Unit) are required to be resistant to shock originatingfrom a heat cycle. Specifically, electronic components are required tobe free from cracks in solder used for mounting and in body of thecomponents themselves when bending stress resulting from thermalexpansion and contraction of amounting board originating from a heatcycle is applied thereto.

In order to satisfy the requirements above, use of a thermosettingconductive paste for an external electrode of a ceramic electroniccomponent, instead of a conventional firing-type conductive paste, hasbeen proposed.

WO2004/053901 discloses a stack ceramic electronic component having anexternal electrode formed of a thermosetting conductive paste.

In the stack ceramic electronic component described in WO2004/053901, anexternal electrode is formed through plating of an external electrodelayer formed of a thermosetting conductive paste containing a resin andmetal powders having a melting point not higher than 300° C.

In general, a resin is high in hygroscopicity and tends to absorbmoisture. As a resin which has absorbed moisture is heated, moisture isvaporized and water vapor is generated in the resin, and in addition,some of the resin is decomposed to generate a decomposition gas.

In a case that an external electrode is formed through plating of anexternal electrode layer formed of a thermosetting conductive pastecontaining a resin as in the stack ceramic electronic componentdescribed in WO2004/053901, heating in a reflow step in mounting thestack ceramic electronic component leads to generation of water vaporand a decomposition gas in the external electrode. The water vapor andthe decomposition gas are confined by a plating film on a surface of theexternal electrode.

In a case that a defective portion or a partially thin portion ispresent in a plating film, the confined water vapor and decompositiongas may burst from the defective portion or the thin portion to theoutside of the external electrode. This burst causes such a phenomenonthat solder molten in the reflow step is blown off, which is generallycalled “solder burst”.

In a case that a thermosetting conductive paste is directly applied to aceramic stack as in the stack ceramic electronic component described inWO2004/053901, moisture contained in the ceramic stack is absorbed inthe resin in the external electrode. Then, an amount of water vaporgenerated during heating increases, and solder burst is more likely.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide a ceramicelectronic component and a method of manufacturing the same, whichsignificantly reduce or prevent the occurrence of solder burst.

A ceramic electronic component according to a preferred embodiment thepresent invention preferably is a ceramic electronic component having anouter dimension of a length not smaller than about 0.57 mm and notgreater than about 0.65 mm, a width not smaller than about 0.27 mm andnot greater than about 0.35 mm, and a thickness not smaller than about0.27 mm and not greater than about 0.35 mm, for example. The ceramicelectronic component includes a rectangular or substantially rectangularparallelepiped-shaped stack in which a ceramic layer and an internalelectrode are alternately stacked and an external electrode provided ona portion of a surface of the stack and electrically connected to theinternal electrode. The external electrode includes an inner externalelectrode covering a portion of the surface of the stack and including amixture of a resin component and a metal component and an outer externalelectrode covering the inner external electrode and including a metalcomponent. A volume occupied by the resin component in the innerexternal electrode preferably is not lower than about 3.79×10⁻⁷ ml andnot higher than about 1.02×10⁻⁶ ml, for example.

A ceramic electronic component according to a further preferredembodiment of the present invention preferably is a ceramic electroniccomponent having an outer dimension of a length not smaller than about0.95 mm and not greater than about 1.20 mm, a width not smaller thanabout 0.45 mm and not greater than about 0.70 mm, and a thickness notsmaller than about 0.45 mm and not greater than about 0.70 mm, forexample. The ceramic electronic component includes a rectangular orsubstantially rectangular parallelepiped-shaped stack in which a ceramiclayer and an internal electrode are alternately stacked and an externalelectrode provided on a portion of a surface of the stack andelectrically connected to the internal electrode. The external electrodeincludes an inner external electrode covering a portion of the surfaceof the stack and including a mixture of a resin component and a metalcomponent and an outer external electrode covering the inner externalelectrode and composed of a metal component. A volume occupied by theresin component in the inner external electrode preferably is not lowerthan about 5.23×10⁻⁷ ml and not higher than about 2.53×10⁻⁶ ml, forexample.

A ceramic electronic component according to an additional preferredembodiment of the present invention preferably is a ceramic electroniccomponent having an outer dimension of a length not smaller than about1.5 mm and not greater than about 1.8 mm, a width not smaller than about0.7 mm and not greater than about 1.0 mm, and a thickness not smallerthan about 0.7 mm and not greater than about 1.0 mm, for example. Theceramic electronic component includes a rectangular or substantiallyrectangular parallelepiped-shaped stack in which a ceramic layer and aninternal electrode are alternately stacked and an external electrodeprovided on a portion of a surface of the stack and electricallyconnected to the internal electrode. The external electrode includes aninner external electrode covering a portion of the surface of the stackand including a mixture of a resin component and a metal component andan outer external electrode covering the inner external electrode andcomposed of a metal component. A volume occupied by the resin componentin the inner external electrode preferably is not lower than about1.94×10⁻⁶ ml and not higher than about 2.84×10⁻⁶ ml, for example.

A method of manufacturing a ceramic electronic component according toanother preferred embodiment of the present invention preferably is amethod of manufacturing a ceramic electronic component having an outerdimension of a length not smaller than about 0.57 mm and not greaterthan about 0.65 mm, a width not smaller than about 0.27 mm and notgreater than about 0.35 mm, and a thickness not smaller than about 0.27mm and not greater than about 0.35 mm, for example. The method ofmanufacturing a ceramic electronic component includes the steps ofpreparing a rectangular or substantially rectangularparallelepiped-shaped stack in which a ceramic layer and an internalelectrode are alternately stacked and providing an external electrode ona portion of a surface of the stack so as to electrically be connectedto the internal electrode. The step of providing an external electrodeincludes the steps of providing an inner external electrode by applyinga mixture of a resin component and a metal component so as to cover aportion of the surface of the stack and heating the stack onto which themixture has been applied and providing an outer external electrode byplating the inner external electrode with a metal component so as tocover the inner external electrode. A content of the metal component inthe mixture preferably is not lower than about 46 volume % and nothigher than about 79 volume %, for example.

A method of manufacturing a ceramic electronic component according toanother preferred embodiment of the present invention preferably is amethod of manufacturing a ceramic electronic component having an outerdimension of a length not smaller than about 0.95 mm and not greaterthan about 1.20 mm, a width not smaller than about 0.45 mm and notgreater than about 0.70 mm, and a thickness not smaller than about 0.45mm and not greater than about 0.70 mm, for example. The method ofmanufacturing a ceramic electronic component includes the steps ofpreparing a rectangular or substantially rectangularparallelepiped-shaped stack in which a ceramic layer and an internalelectrode are alternately stacked and providing an external electrode ona portion of a surface of the stack so as to electrically be connectedto the internal electrode. The step of providing an external electrodeincludes the steps of providing an inner external electrode by applyinga mixture of a resin component and a metal component so as to cover aportion of the surface of the stack and heating the stack onto which themixture has been applied and providing an outer external electrode byplating the inner external electrode with a metal component so as tocover the inner external electrode. A content of the metal component inthe mixture preferably is not lower than about 60 volume % and nothigher than about 82 volume %, for example.

A method of manufacturing a ceramic electronic component according to afurther preferred embodiment of the present invention preferably is amethod of manufacturing a ceramic electronic component having an outerdimension of a length not smaller than about 1.5 mm and not greater thanabout 1.8 mm, a width not smaller than about 0.7 mm and not greater thanabout 1.0 mm, and a thickness not smaller than about 0.7 mm and notgreater than about 1.0 mm, for example. The method of manufacturing aceramic electronic component includes the steps of preparing arectangular or substantially rectangular parallelepiped-shaped stack inwhich a ceramic layer and an internal electrode are alternately stackedand providing an external electrode on a portion of a surface of thestack so as to electrically be connected to the internal electrode. Thestep of providing an external electrode includes the steps of providingan inner external electrode by applying a mixture of a resin componentand a metal component so as to cover a portion of the surface of thestack and heating the stack onto which the mixture has been applied andproviding an outer external electrode by plating the inner externalelectrode with a metal component so as to cover the inner externalelectrode. A content of the metal component in the mixture preferably isnot lower than about 71 volume % and not higher than about 79 volume %,for example.

The metal component of the inner external electrode preferably includesa first metal component and a second metal component higher in meltingpoint than the first metal component.

A content of the first metal component in the mixture preferably is notlower than about 20 weight % and not higher than about 40 weight %, forexample.

A content of the second metal component in the mixture preferably is notlower than about 30 weight % and not higher than about 70 weight %, forexample.

The first metal component preferably is Sn, for example.

The second metal component preferably is Ag or Cu, for example.

The metal component of the outer external electrode preferably is Ni,for example.

A temperature for heating the stack in the step of providing an innerexternal electrode preferably is not lower than about 450° C., forexample.

In the step of providing an inner external electrode, the stackpreferably is heated in an atmosphere in which a concentration of oxygenis not higher than about 100 ppm, for example.

According to various preferred embodiments of the present invention, theoccurrence of solder burst is significantly reduced or prevented.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing an appearance of a ceramicelectronic component according to a first preferred embodiment of thepresent invention.

FIG. 2 is a cross-sectional view of the ceramic electronic component inFIG. 1 viewed in a direction shown with an arrow along the line II-II.

FIG. 3 is a cross-sectional view of the ceramic electronic component inFIG. 2 viewed in a direction shown with an arrow along the line III-III.

FIG. 4 is a cross-sectional view of the ceramic electronic component inFIG. 2 viewed in a direction shown with an arrow along the line IV-IV.

FIG. 5 is a flowchart showing a method of manufacturing a ceramicelectronic component according to the first preferred embodiment of thepresent invention.

FIG. 6 is a perspective view showing appearance of a ceramic electroniccomponent in a first variation of a preferred embodiment of the presentinvention.

FIG. 7 is a perspective view showing appearance of a ceramic electroniccomponent in a second variation of a preferred embodiment of the presentinvention.

FIG. 8 is a diagram of the ceramic electronic component in FIG. 7 viewedin a direction shown with an arrow VIII.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A ceramic electronic component according to preferred embodiments of thepresent invention will be described hereinafter with reference to thedrawings. In the description of the preferred embodiments below, thesame or corresponding elements in the drawings have the same referencenumerals allotted and description thereof will not be repeated. Though aceramic capacitor will be described as a ceramic electronic component inthe description below, the electronic component is not limited to acapacitor, and the electronic component includes a piezoelectriccomponent, a thermistor, or an inductor, for example.

First Preferred Embodiment

FIG. 1 is a perspective view showing an appearance of a ceramicelectronic component according to a first preferred embodiment of thepresent invention. FIG. 2 is a cross-sectional view of the ceramicelectronic component in FIG. 1 viewed in a direction shown with an arrowalong the line II-II. FIG. 3 is a cross-sectional view of the ceramicelectronic component in FIG. 2 viewed in a direction shown with an arrowalong the line III-III. FIG. 4 is a cross-sectional view of the ceramicelectronic component in FIG. 2 viewed in a direction shown with an arrowalong the line IV-IV. FIG. 1 shows a longitudinal direction L of a stackwhich will be described later, a width direction W of the stack, and athickness direction T of the stack.

As shown in FIGS. 1 to 4, a ceramic electronic component 100 accordingto the first preferred embodiment of the present invention includes arectangular or substantially rectangular parallelepiped-shaped stack 110in which a ceramic layer 150 and a flat-plate-shaped internal electrode140 are alternately stacked and an external electrode provided on aportion of a surface of stack 110 and electrically connected to internalelectrode 140.

In the present preferred embodiment, the external electrode is providedin each of opposing end portions of stack 110. Specifically, theexternal electrode includes a first external electrode 120 provided atone end portion in a longitudinal direction of stack 110 and a secondexternal electrode 130 provided at the other end portion in thelongitudinal direction of stack 110.

Of internal electrodes 140 opposed adjacently to each other, a firstinternal electrode 141 is electrically connected to first externalelectrode 120, and a second internal electrode 142 is electricallyconnected to second external electrode 130.

In stack 110 according to the present preferred embodiment, a directionof stack of ceramic layer 150 and internal electrode 140 isperpendicular or substantially perpendicular to longitudinal direction Lof stack 110 and width direction W of stack 110. Namely, a direction ofstack of ceramic layer 150 and internal electrode 140 is in parallel orsubstantially parallel to thickness direction T of stack 110.

Stack 110 includes a pair of main surfaces perpendicular orsubstantially perpendicular to thickness direction T, a pair of endsurfaces perpendicular or substantially perpendicular to longitudinaldirection L, and a pair of side surfaces perpendicular or substantiallyperpendicular to width direction W.

As described above, though stack 110 has an outer shape like arectangular or substantially rectangular parallelepiped, it may berounded in at least one of a corner portion and a ridgeline portion.Namely, a shape like a rectangular or substantially rectangularparallelepiped includes a rectangular or substantially rectangularparallelepiped rounded in at least one of a corner portion and aridgeline portion. A rectangular or substantially rectangularparallelepiped-shaped member generally means a member including a pairof main surfaces, a pair of side surfaces, and a pair of end surfaces.In stack 110, any surface of the pair of main surfaces, the pair of sidesurfaces, and the pair of side surfaces may include projections andrecesses.

Each ceramic layer 150 has a thickness preferably not smaller than about0.5 μm and not greater than about 10 μm, for example. As a material forforming ceramic layer 150, dielectric ceramics mainly composed ofBaTiO₃, CaTiO₃, SrTiO₃, or CaZrO₃ can be used, for example. A materialin which a Mn compound, a Fe compound, a Cr compound, a Co compound, ora Ni compound is added as a sub component to such a main component maypreferably be used, for example.

In a case that an electronic component is a piezoelectric component,stack 110 preferably is made of piezoelectric ceramics. For example, PZT(lead zirconate titanate)-based ceramics is available as piezoelectricceramics.

In a case that an electronic component is a thermistor, stack 110preferably is made of semiconductor ceramics. For example, spinel-typeceramics is available as semiconductor ceramics.

In a case that an electronic component is an inductor, stack 110preferably is made of magnetic ceramics. For example, ferrite ceramicsis available as magnetic ceramics.

In the present preferred embodiment, stack 110 preferably has an outerdimension of a length not smaller than about 0.51 mm and not greaterthan about 0.59 mm, a width not smaller than about 0.24 mm and notgreater than about 0.32 mm, and a thickness not smaller than about 0.24mm and not greater than about 0.32 mm, for example.

Each internal electrode 140 preferably has a thickness preferably notsmaller than about 0.2 μm and not greater than about 2.0 μm. Internalelectrode 140 includes first internal electrode 141 substantially in arectangular shape in a two-dimensional view and second internalelectrode 142 substantially in a rectangular shape in a two-dimensionalview. First internal electrode 141 and second internal electrode 142 arealternately arranged at regular intervals along thickness direction T ofstack 110. First internal electrode 141 and second internal electrode142 are arranged to be opposed to each other, with ceramic layer 150lying therebetween.

First internal electrode 141 extends from one end portion in thelongitudinal direction of stack 110 toward the other end portion. Asshown in FIG. 3, first internal electrode 141 is connected to firstexternal electrode 120 in one end surface of stack 110.

Second internal electrode 142 extends from the other end portion in thelongitudinal direction of stack 110 toward one end portion. As shown inFIG. 4, second internal electrode 142 is connected to second externalelectrode 130 in the other end surface of stack 110.

As a material for forming internal electrode 140, a metal such as Ni,Cu, Ag, Pd, or Au or an alloy containing at least one of these metalssuch as an alloy of Ag and Pd may preferably be used, for example. Amaterial forming internal electrode 140 forms an alloy as a result ofchemical combination with a first metal component contained in a mixtureforming an inner external electrode which will be described later.

The external electrode includes an inner external electrode coveringeach of opposing end portions of stack 110 and includes a mixture of aresin component and a metal component and an outer external electrodecovering the inner external electrode and composed of a metal component.As a resin component, a thermosetting resin such as an epoxy resin or aphenol resin preferably is used. A thickness of the inner externalelectrode is preferably not smaller than 5.0 μm and not greater than70.0 μm.

As shown in FIGS. 2 to 4, first external electrode 120 includes a firstinner external electrode 121 and a first outer external electrode 122.First inner external electrode 121 covers one end portion in thelongitudinal direction of stack 110. A portion of first inner externalelectrode 121 forms an alloy together with a portion of first internalelectrode 141.

Second external electrode 130 includes a second inner external electrode131 and a second outer external electrode 132. Second inner externalelectrode 131 covers the other end portion in the longitudinal directionof stack 110. A portion of second inner external electrode 131 forms analloy together with a portion of second internal electrode 142.

In the present preferred embodiment, the inner external electrodeincludes, as a metal component, a first metal component and a secondmetal component higher in melting point than the first metal component.A melting point of the first metal component is preferably not higherthan about 550° C. and further preferably not lower than about 180° C.and not higher than about 340° C., for example. A melting point of thesecond metal component is preferably not lower than about 850° C. andnot higher than about 1050° C., for example.

As the first metal component, a metal such as Sn, In, or Bi or an alloycontaining at least one of these metals preferably is used. As the firstmetal component, an alloy containing Sn such as an alloy of Sn and Ag,an alloy of Sn and Bi, or an alloy of Sn, Ag, and Cu, or Sn ispreferably used. By using such a metal component, an alloy layer ofinternal electrode 140 and the inner external electrode are easilyformed, and hence electrical connection between internal electrode 140and the inner external electrode is easily and reliably established.

The first metal component is softened and fluidized through heating in areflow step in mounting ceramic electronic component 100, and chemicallycombined with a material forming internal electrode 140 to form analloy.

A content of the first metal component in a heated and cured mixture ispreferably not lower than about 8 volume % and not higher than about 18volume %, for example.

As the second metal component, a metal such as Ag, Cu, Pd, Pt, or Au oran alloy containing at least one of these metals preferably is used. Asthe second metal component, an alloy containing Ag such as an alloy ofAg and Pd, or Ag, or Cu is preferably used.

The second metal component defines a conduction path within the innerexternal electrode. The second metal component defines an alloy as aresult of chemical combination with the first metal component. A contentof the second metal component in a heated and cured mixture ispreferably not lower than about 19 volume % and not higher than about 25volume %, for example.

First outer external electrode 122 covers first inner external electrode121. A portion of first outer external electrode 122 forms an alloytogether with a portion of first inner external electrode 121. Secondouter external electrode 132 covers second inner external electrode 131.A portion of second outer external electrode 132 forms an alloy togetherwith a portion of second inner external electrode 131.

In the present preferred embodiment, a metal component of the outerexternal electrode is Ni. A metal component of the outer externalelectrode is not limited to Ni, and it may be Cu. The outer externalelectrode defines and functions as a solder barrier layer. A thicknessof the outer external electrode is preferably not smaller than about 1.0μm and not greater than about 15.0 μm, for example.

In the present preferred embodiment, the external electrode furtherincludes a not-shown surface external electrode covering the outerexternal electrode. As a material for forming the surface externalelectrode, a metal such as Sn or Au having good solder wettability or analloy containing at least one of these metals is preferably used. Athickness of the surface external electrode is preferably not smallerthan about 1.0 μm and not greater than about 15.0 μm, for example.

Ceramic electronic component 100 according to the present preferredembodiment preferably has an outer dimension of a length not smallerthan about 0.57 mm and not greater than about 0.65 mm, a width notsmaller than about 0.27 mm and not greater than about 0.35 mm, and athickness not smaller than about 0.27 mm and not greater than about 0.35mm, for example.

As the inner external electrode contains a resin component, it functionsas a buffer layer. Namely, when a physical shock or a shock originatingfrom a heat cycle is applied to ceramic electronic component 100, theresin component in the inner external electrode absorbs the shock.Consequently, occurrence of a crack in solder used for mounting and inceramic electronic component 100 itself is significantly reduced orprevented.

In a case that an amount of the resin component in the inner externalelectrode is insufficient, adhesion between stack 110 and the innerexternal electrode is lowered and cohesive force of the inner externalelectrode is lowered. Therefore, in a case that an amount of the resincomponent in the inner external electrode is insufficient, shockresistance of the inner external electrode is lowered. In this case,when a shock is applied to mounted ceramic electronic component 100, theinner external electrode is broken and ceramic electronic component 100is likely to be detached from the mounting board.

In contrast, in a case that an amount of the resin component in theinner external electrode is large, an amount of moisture absorbed in theresin component is large and solder burst is likely. Therefore, anamount of the resin component in the inner external electrode should besmall within such a range that the inner external electrode can functionas a buffer layer.

In ceramic electronic component 100 according to the present preferredembodiment, a volume occupied by the resin component in the innerexternal electrode preferably is not lower than about 3.79×10⁻⁷ ml andnot higher than about 1.02×10⁻⁶ ml, for example.

By thus lowering a volume occupied by the resin component in the innerexternal electrode, an amount of moisture absorbed by the resincomponent and an amount of the resin component itself is decreased.Consequently, an amount of water vapor and an amount of a decompositiongas generated in the external electrode through heating in a reflow stepin mounting ceramic electronic component 100 are decreased, so thatoccurrence of solder burst is significantly reduced or prevented.

A method of manufacturing a ceramic electronic component according tothe present preferred embodiment will be described below with referenceto the drawings. FIG. 5 is a flowchart showing a method of manufacturinga ceramic electronic component according to the present preferredembodiment.

As shown in FIG. 5, rectangular or substantially rectangularparallelepiped-shaped stack 110 in which ceramic layer 150 and internalelectrode 140 are alternately stacked is prepared (S100). Stack 110 isfabricated as below.

Initially, a ceramic green sheet is fabricated by applying a ceramicpaste containing ceramic powders into a sheet with screen printing anddrying the paste.

In some of a plurality of fabricated ceramic green sheets, a conductivepaste used to provide an internal electrode is applied onto the ceramicgreen sheet in a prescribed pattern with screen printing, for example.Thus, a ceramic green sheet including a conductive pattern to define aninternal electrode and a ceramic green sheet not including a conductivepattern are prepared. The ceramic paste and the conductive paste used toprovide an internal electrode may contain a binder and a solvent whichare known.

A mother stack is fabricated by stacking a prescribed number of ceramicgreen sheets not having a conductive pattern formed thereon,successively stacking thereon a plurality of ceramic green sheets havinga conductive pattern formed thereon, and stacking further thereon aprescribed number of ceramic green sheets not having a conductivepattern formed thereon. A mother stack may be pressed in a direction ofstack using isostatic pressing as necessary, for example.

By cutting and dividing the mother stack in a prescribed shape, aplurality of rectangular or substantially rectangularparallelepiped-shaped soft stacks are fabricated. A rectangular orsubstantially rectangular parallelepiped-shaped soft stack may besubjected to barrel polishing so as to round a corner portion of thesoft stack.

Stack 110 is fabricated by curing the soft stack by firing the same. Afiring temperature is set as appropriate depending on a type of aceramic material and a conductive material, and for example, atemperature is set within a range not lower than about 900° C. and nothigher than about 1300° C.

Then, a mixture paste which is a mixture containing a resin componentsuch as a thermosetting resin, a first metal filler including a firstmetal component, and a second metal filler including a second metalcomponent higher in melting point than the first metal component isprepared. A weight ratio (a content) of the first metal filler to atotal weight of the first metal filler, the second metal filler, and theresin component in the mixture paste is preferably not lower than about20 weight % and not higher than about 40 weight % and more preferablynot lower than about 22.0 weight % and not higher than about 37.2 weight%, for example.

In a case that a content of the first metal filler is too low, an amountof an alloy formed as a result of chemical combination with a materialforming internal electrode 140 is insufficient, and electricalconnection between internal electrode 140 and the external electrodecannot be ensured.

In a case that a content of the first metal filler is too high, anamount of the first metal filler which does not react with the secondmetal filler but remains increases. In this case, the external electrodemay deform due to heating in a reflow step in mounting ceramicelectronic component 100. A shape of the first metal filler is notparticularly limited, and it may be spherical or flat. An averageparticle size of the first metal filler is not particularly limited, andfor example, it is preferably not smaller than about 1.0 μm and notgreater than about 10 μm.

A weight ratio (a content) of the second metal filler to a total weightof the first metal filler, the second metal filler, and the resincomponent in the mixture paste is preferably not lower than about 30weight % and not higher than about 70 weight % and more preferably notlower than about 41.2 weight % and not higher than about 64 weight %.

In a case that a content of the second metal filler is too low,conductivity of the external electrode is lowered and equivalent seriesresistance (ESR) of ceramic electronic component 100 may become high.

In a case that a content of the second metal filler is too high, acontent of the resin component in the inner external electrode is low,and the inner external electrode may not function as a buffer layer. Ashape of the second metal filler is not particularly limited, and it maybe spherical or flat. An average particle size of the second metalfiller is not particularly limited, and for example, it may preferablybe not smaller than about 0.5 μm and not greater than about 5.0 μm.

A weight ratio (a content) of the resin component to a total weight ofthe first metal filler, the second metal filler, and the resin componentin the mixture paste is preferably not lower than about 5 weight % andnot higher than about 40 weight % and more preferably not lower thanabout 9.8 weight % and not higher than about 31.5 weight %, for example.

In a case that a content of the resin component is too low, the innerexternal electrode may not function as a buffer layer. In a case that acontent of the resin component is too high, conductivity of the externalelectrode is lowered and equivalent series resistance (ESR) of ceramicelectronic component 100 may become high.

The inner external electrode is provided by applying the mixture pasteto a portion of the surface of stack 110 with various printing methodsor dipping and heating stack 110 to which the mixture paste has beenapplied (S111).

In the step of providing an inner external electrode (S111), stack 110to which the mixture paste has been applied is preferably heated in aneutral atmosphere such as a nitrogen gas atmosphere or a reducingatmosphere or another non-oxidizing atmosphere. Specifically, stack 110to which the mixture paste has been applied is preferably heated in anatmosphere in which a concentration of oxygen preferably is not higherthan about 100 ppm, for example.

A temperature for heating stack 110 to which the mixture paste has beenapplied is preferably not lower than a temperature at which a crystalstate in an alloy of the first metal component and the second metalcomponent thermodynamically changes (a temperature range in whichdiffusion of the first metal component of the inner external electrodetoward the internal electrode is promoted). Specifically, a temperaturefor heating stack 110 to which the mixture paste has been applied ispreferably not lower than about 450° C., for example. In a case thatstack 110 to which the mixture paste has been applied is heated at sucha temperature, an alloy layer of internal electrode 140 and the innerexternal electrode is formed to extend from an end portion of internalelectrode 140 toward the inner external electrode.

In a case that a temperature for heating stack 110 to which the mixturepaste has been applied is lower than about 450° C., an amount of theresin component which remains in the inner external electrode increasesand hence occurrence of solder burst is less likely to be suppressed,which is not preferred.

In contrast, in a case that a temperature for heating stack 110 to whichthe mixture paste has been applied is too high, the inner externalelectrode cannot be formed in a stable manner. Therefore, a temperaturefor heating stack 110 to which the mixture paste has been applied ispreferably lower than about 800° C. and more preferably not higher thanabout 650° C., for example.

In the present preferred embodiment, a temperature for heating stack 110to which the mixture paste has been applied and an amount of a metalcomponent contained in the mixture paste are adjusted so as to set anamount of the resin component contained in the inner external electrodeto a desired amount. By raising a heating temperature, the resincomponent contained in the inner external electrode can more likely tobe released. By changing an amount of the inner external electrodeitself by adjusting a thickness of the inner external electrode as well,an amount of the resin component contained in the inner externalelectrode is set to a desired amount. Therefore, even in a case that anamount of the resin component contained in the mixture paste isrelatively large, an amount of the resin component contained in theinner external electrode is set to a desired amount by adjusting atleast one of a heating temperature and a thickness of the inner externalelectrode.

Then, an outer external electrode is provided on the inner externalelectrode by bonding a metal component with plating or the like (S112).Electrolytic plating is preferred as a method of providing an outerexternal electrode, for example.

A surface external electrode is further provided on the outer externalelectrode by bonding a metal component with plating or the like.Electrolytic plating is preferred as a method of providing a surfaceexternal electrode, for example.

Through the step of providing an inner external electrode (S111) and thestep of providing an outer external electrode (S112) and providing asurface external electrode, the external electrode is provided on aportion of the surface of stack 110 so as to electrically be connectedto internal electrode 140 (S110).

Ceramic electronic component 100 according to the present preferredembodiment preferably is fabricated through the step of preparing stack110 (S100) and the step of providing an external electrode (S110).

As described above, in the method of manufacturing ceramic electroniccomponent 100 according to the present preferred embodiment, a desiredamount of resin component is provided in an inner external electrode, sothat solder burst is significantly reduced or prevented while a functionof the inner external electrode as a buffer layer is maintained.

A ceramic electronic component and a method of manufacturing the sameaccording to a second preferred embodiment of the present invention willbe described below. The ceramic electronic component and the method ofmanufacturing the same according to the second preferred embodiment ofthe present invention are different from the ceramic electroniccomponent and the method of manufacturing the same according to thefirst preferred embodiment only in an outer dimension of the ceramicelectronic component and a volume occupied by the resin component in theinner external electrode, and hence description of other features willnot be repeated.

Second Preferred Embodiment

Ceramic electronic component 100 according to the second preferredembodiment of the present invention preferably has an outer dimension ofa length not smaller than about 0.95 mm and not greater than about 1.20mm, a width not smaller than about 0.45 mm and not greater than about0.70 mm, and a thickness not smaller than about 0.45 mm and not greaterthan about 0.70 mm, for example.

In the present preferred embodiment, stack 110 preferably has an outerdimension of a length not smaller than about 0.87 mm and not greaterthan about 1.12 mm, a width not smaller than about 0.41 mm and notgreater than about 0.66 mm, and a thickness not smaller than about 0.41mm and not greater than about 0.66 mm, for example.

In the ceramic electronic component according to the present preferredembodiment, a volume occupied by the resin component in the innerexternal electrode preferably is not lower than about 5.23×10⁻⁷ ml andnot higher than about 2.53×10⁻⁶ ml, for example.

Since a volume occupied by the resin component in the inner externalelectrode is decreased also in the ceramic electronic componentaccording to the present preferred embodiment, an amount of moistureabsorbed by the resin component and an amount of the resin componentitself is decreased. Consequently, an amount of water vapor and anamount of a decomposition gas generated in the external electrodethrough heating in a reflow step in mounting ceramic electroniccomponent 100 are decreased, so that occurrence of solder burst issignificantly reduced or prevented.

A ceramic electronic component and a method of manufacturing the sameaccording to a third preferred embodiment of the present invention willbe described below. The ceramic electronic component and the method ofmanufacturing the same according to the third preferred embodiment ofthe present invention are different from the ceramic electroniccomponent and the method of manufacturing the same according to thefirst preferred embodiment only in an outer dimension of the ceramicelectronic component and a volume occupied by the resin component in theinner external electrode, and hence description of other features willnot be repeated.

Third Preferred Embodiment

Ceramic electronic component 100 according to the third preferredembodiment of the present invention preferably has an outer dimension ofa length not smaller than about 1.5 mm and not greater than about 1.8mm, a width not smaller than about 0.7 mm and not greater than about 1.0mm, and a thickness not smaller than about 0.7 mm and not greater thanabout 1.0 mm, for example.

In the present preferred embodiment, stack 110 preferably has an outerdimension of a length not smaller than about 1.4 mm and not greater thanabout 1.7 mm, a width not smaller than about 0.65 mm and not greaterthan about 0.95 mm, and a thickness not smaller than about 0.65 mm andnot greater than about 0.95 mm, for example.

In the ceramic electronic component according to the present preferredembodiment, a volume occupied by the resin component in the innerexternal electrode preferably is not lower than about 1.94×10⁻⁶ ml andnot higher than about 2.84×10⁻⁶ ml, for example.

Since a volume occupied by the resin component in the inner externalelectrode is decreased also in the ceramic electronic componentaccording to the present preferred embodiment, an amount of moistureabsorbed by the resin component and an amount of the resin componentitself is decreased. Consequently, an amount of water vapor and anamount of a decomposition gas generated in the external electrodethrough heating in a reflow step in mounting ceramic electroniccomponent 100 are decreased, so that occurrence of solder burst issignificantly decreased.

A position where an external electrode is provided is not limited toopposing end portions of stack 110. A variation of a preferredembodiment of the present invention in which an external electrode isprovided at a position other than opposing end portions of stack 110will be described below.

FIG. 6 is a perspective view showing appearance of a ceramic electroniccomponent in a first variation of a preferred embodiment of the presentinvention. FIG. 7 is a perspective view showing appearance of a ceramicelectronic component in a second variation of a preferred embodiment ofthe present invention. FIG. 8 is a diagram of the ceramic electroniccomponent in FIG. 7 viewed in a direction shown with an arrow VIII.

As shown in FIG. 6, in a ceramic electronic component 100 a in the firstvariation, a first external electrode 120 a is provided as extendingfrom one side surface of a stack 110 a to opposing main surfaces. Asecond external electrode 130 a is provided as extending from one sidesurface of stack 110 a to opposing main surfaces. Ceramic electroniccomponent 100 a in the first variation is what is called a capacitorarray.

As shown in FIGS. 7 and 8, in a ceramic electronic component 100 b inthe second variation, a first external electrode 120 b is provided onone end surface side on one main surface of stack 110 a. A secondexternal electrode 130 b is provided on the other end surface side onone main surface of stack 110 a. Ceramic electronic component 100 b inthe second variation is what is called a filletless capacitor.

A non-limiting experimental example in which advantageous effects of apreferred embodiment of the present invention were confirmed will bedescribed below.

First Experimental Example

Five hundred ceramic electronic components each preferably having anouter dimension of a length not smaller than about 0.57 mm and notgreater than about 0.65 mm, a width not smaller than about 0.27 mm andnot greater than about 0.35 mm, and a thickness not smaller than about0.27 mm and not greater than about 0.35 mm, for example, were fabricatedand subjected to an experiment.

Initially, features and conditions common in fabrication of each ceramicelectronic component will be described. BaTiO₃ was used as a materialfor forming a ceramic layer. Ni was used as a material for forming aninternal electrode. An external electrode was provided at each ofopposing end portions of the stack.

A first metal filler was composed of Sn and a second metal filler wascomposed of Ag. An epoxy resin was used as a resin component. A weightratio between the first metal filler and the second metal filler in amixture paste was set to about 3:7. The stack to which the mixture pastehad been applied was heated in a nitrogen gas atmosphere for 20 minutes.

A thickness of an inner external electrode preferably was not smallerthan about 20 μm and not greater than about 30 μm (a target value was amedian value in this range). An outer external electrode was formed froma Ni plating film having a thickness not smaller than about 2 μm and notgreater than about 3.5 μm (a target value was a median value in thisrange). A surface external electrode was formed from a Sn plating filmhaving a thickness not smaller than about 2 μm and not greater thanabout 3 μm (a target value was a median value in this range).

In Example 1, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 79 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 550° C.

In Example 2, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 71 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 450° C.

In Example 3, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 46 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 450° C.

In Comparative Example 1, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set toabout 82 volume % and a temperature for heating stack 110 to which themixture paste had been applied being set to about 450° C.

In Comparative Example 2, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set toabout 40 volume % and a temperature for heating stack 110 to which themixture paste had been applied being set to about 550° C.

In 100 ceramic electronic components fabricated in each of Examples 1 to3 and Comparative Examples 1 and 2, an average actually measured valueof an outer dimension of the stack, a volume occupied by the resincomponent in the inner external electrode, an incidence of solder burst,and a ratio of ceramic electronic components detached from a mountingboard due to a shock were calculated.

Here, a method of calculating a volume occupied by a resin component inan inner external electrode will be described. Initially, a weight ofstack 110 is measured. Then, an amount of increase from the weight ofstack 110 is calculated by measuring a weight of the stack after themixture paste was applied. This amount of increase is the weight of theapplied, uncured mixture paste. A weight of a resin contained in theuncured mixture paste is calculated by multiplying the weight of thisuncured mixture paste by a weight ratio (a content) of the resin in theuncured mixture paste.

A thermogravimetric/differential thermal analyzer (TG-DTA) is used tomeasure in advance a weight of the uncured resin component and a weightof the cured resin component with a temperature condition being varied.As a result of this measurement, a tendency of transition of a weight ofthe resin component in heating at a firing temperature is determined.Specifically, a rate of decrease in weight of the resin component inheating at a firing temperature is determined. Instead of thethermogravimetric/differential thermal analyzer (TG-DTA), athermogravimetry mass spectrometer (TG-MS) may be used to measure aweight of the uncured resin component and a weight of the cured resincomponent with a temperature condition being varied.

An amount of decrease of the cured resin is calculated by multiplying arate of decrease in weight of the resin component determined in advanceby a weight of the uncured resin. Therefore, a weight of a resincontained in the cured mixture paste, that is, in the inner externalelectrode, is calculated by subtracting an amount of decrease in curedresin from the weight of the resin contained in the uncured mixturepaste. A volume occupied by the resin contained in the inner externalelectrode is calculated by dividing the weight of the cured resin bydensity of the cured resin.

A method below may be used as another method of calculating a volume ofthe resin component in the inner external electrode. Initially, theexternal electrode is scraped off from the ceramic electronic component.Then, a thermogravimetric/differential thermal analyzer (TG-DTA) or athermogravimetry mass spectrometer (TG-MS) is used to measure a weightof the resin component contained in the external electrode which hasbeen scraped off. A volume occupied by the resin contained in theexternal electrode is calculated by dividing the measured weight of theresin by density of the cured resin. This calculated volume is thevolume occupied by the resin component in the inner external electrode.

A method below may be used as yet another method of calculating a volumeof the resin component in the inner external electrode. Initially, avolume occupied by the external electrode in the ceramic electroniccomponent is calculated. Specifically, a volume occupied by the externalelectrode is calculated by subtracting a volume of the stack from avolume of the ceramic electronic component measured with a laser volumemeter. Then, the ceramic electronic component is polished such that across-section including the external electrode, which is in parallel tothe longitudinal direction of the ceramic electronic component, isexposed. A photograph of the exposed cross-section is taken with an SEM.The taken SEM photograph is subjected to binarization and imageprocessing so as to calculate an area ratio between the resin componentand the metal component. A volume occupied by the resin contained in theexternal electrode is estimated by calculating a ratio of an areaoccupied by the resin component from the calculated area ratio andmultiplying this area ratio by the volume occupied by the externalelectrode. This estimated volume is the volume of the resin component inthe inner external electrode.

An incidence of solder burst was calculated as below. After a ceramicelectronic component was mounted in a reflow step to a glass epoxysubstrate, a state of release of solder was visually checked. Anincidence of solder burst was calculated by dividing the number ofceramic electronic components in which solder burst had been observed bythe number of mounted ceramic electronic components (100) and furthermultiplying the result by 100.

A ratio of ceramic electronic components detached from a mounting boarddue to a shock was calculated as below. A drop test in which a mountingboard on which a ceramic electronic component had been mounted wasdropped from an altitude of 150 cm while the ceramic electroniccomponent was located above was conducted, and a ratio of detachedceramic electronic components was calculated by dividing the number ofceramic electronic components detached from the mounting board due todrop impact by the number of ceramic electronic components subjected tothe drop test and further multiplying the result by 100.

Table 1 summarizes results of experiments in Examples 1 to 3 andComparative Examples 1 and 2.

TABLE 1 Average Actually Volume Measured Ratio of Volume Value of FirstTemperature Occupied Outer Metal Filler for Heating by Resin Ratio ofDimension and Second Stack to Component Detached of Stack Metal FillerWhich in Inner Ceramic Length (mm) in Total Mixture External IncidenceElectronic Width (mm) in Mixture Paste Was Electrode of SolderComponents Thickness (mm) Paste (%) Applied (° C.) (ml) Burst (%) (%)Example 1 0.54 79 550 3.79 × 10⁻⁷ 0 0 0.27 0.27 Example 2 0.51 71 4507.41 × 10⁻⁷ 0 0 0.24 0.24 Example 3 0.59 46 450 1.02 × 10⁻⁶ 15 0 0.320.32 Comparative 0.59 82 450 3.26 × 10⁻⁷ 0 10 Example 1 0.32 0.32Comparative 0.54 40 550 1.10 × 10⁻⁶ 23 0 Example 2 0.27 0.27

As shown in Table 1, in Example 1, an average actually measured value ofan outer dimension of the stack was about 0.54 mm long, about 0.27 mmwide, and about 0.27 mm thick. A volume occupied by the resin componentin the inner external electrode was about 3.79×10⁻⁷ ml. An incidence ofsolder burst was 0%. A ratio of detached ceramic electronic componentswas 0%.

In Example 2, an average actually measured value of an outer dimensionof the stack was about 0.51 mm long, about 0.24 mm wide, and about 0.24mm thick. A volume occupied by the resin component in the inner externalelectrode was about 7.41×10⁻⁷ ml. An incidence of solder burst was 0%. Aratio of detached ceramic electronic components was 0%.

In Example 3, an average actually measured value of an outer dimensionof the stack was about 0.59 mm long, about 0.32 mm wide, and about 0.32mm thick. A volume occupied by the resin component in the inner externalelectrode was about 1.02×10⁻⁶ ml. An incidence of solder burst was about15%. A ratio of detached ceramic electronic components was 0%.

In Comparative Example 1, an average actually measured value of an outerdimension of the stack was 0.59 mm long, 0.32 mm wide, and 0.32 mmthick. A volume occupied by the resin component in the inner externalelectrode was 3.26×10⁻⁷ ml. An incidence of solder burst was 0%. A ratioof detached ceramic electronic components was 10%.

In Comparative Example 2, an average actually measured value of an outerdimension of the stack was 0.54 mm long, 0.27 mm wide, and 0.27 mmthick. A volume occupied by the resin component in the inner externalelectrode was 1.10×10⁻⁶ ml. An incidence of solder burst was 23%. Aratio of detached ceramic electronic components was 0%.

In the present experimental example, it was confirmed that an incidenceof solder burst lowered as a volume occupied by the resin component inthe inner external electrode was smaller. Detachment of a ceramicelectronic component from a mounting board due to a shock was observedwhen a volume occupied by the resin component in the inner externalelectrode was too small.

An incidence of solder burst is preferably not higher than about 15%. Aratio of detached ceramic electronic components is preferably 0%. In aceramic electronic component having an outer dimension of a length notsmaller than about 0.57 mm and not greater than about 0.65 mm, a widthnot smaller than about 0.27 mm and not greater than 0.35 mm, and athickness not smaller than 0.27 mm and not greater than 0.35 mm, itcould be confirmed that a ratio of detached ceramic electroniccomponents could be 0% while an incidence of solder burst was not higherthan about 15%, by setting a volume occupied by the resin component inthe inner external electrode to be not lower than about 3.79×10⁻⁷ ml andnot higher than about 1.02×10⁻⁶ ml.

Second Experimental Example

Five hundred ceramic electronic components each having an outerdimension of a length not smaller than about 0.95 mm and not greaterthan about 1.20 mm, a width not smaller than about 0.45 mm and notgreater than about 0.70 mm, and a thickness not smaller than about 0.45mm and not greater than about 0.70 mm were fabricated and subjected toan experiment.

Initially, features and conditions common in fabrication of each ceramicelectronic component will be described. BaTiO₃ was used as a materialfor forming a ceramic layer. Ni was used as a material forming aninternal electrode.

A first metal filler was composed of Sn and a second metal filler wascomposed of Ag. An epoxy resin was used as a resin component. A weightratio between the first metal filler and the second metal filler in amixture paste was set to about 3:7. The stack to which the mixture pastehad been applied was heated in a nitrogen gas atmosphere for 20 minutes.

A thickness of an inner external electrode was not smaller than about 20μm and not greater than about 30 μm (a target value was a median valuein this range). An outer external electrode was formed from a Ni platingfilm having a thickness not smaller than about 2 μm and not greater thanabout 3.5 μm (a target value was a median value in this range). Asurface external electrode was formed from a Sn plating film having athickness not smaller than about 2 μm and not greater than about 3 μm (atarget value was a median value in this range).

In Example 4, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 82 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about ° C.

In Example 5, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 79 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 550° C.

In Example 6, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 60 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 450° C.

In Comparative Example 3, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set to85 volume % and a temperature for heating stack 110 to which the mixturepaste had been applied being set to 450° C.

In Comparative Example 4, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set to46 volume % and a temperature for heating stack 110 to which the mixturepaste had been applied being set to 550° C.

In 100 ceramic electronic components fabricated in each of Examples 4 to6 and Comparative Examples 3 and 4, an average actually measured valueof an outer dimension of the stack, a volume occupied by the resincomponent in the inner external electrode, an incidence of solder burst,and a ratio of ceramic electronic components detached from a mountingboard due to a shock were calculated.

Table 2 summarizes results of experiments in Examples 4 to 6 andComparative Examples 3 and 4.

TABLE 2 Volume Ratio of Average First Actually Metal Volume MeasuredValue Filler and Temperature Occupied of Outer Second for Heating byResin Ratio of Dimension of Metal Stack to Component Detached StackFiller in Which in Inner Ceramic Length (mm) Total in Mixture ExternalIncidence Electronic Width (mm) Mixture Paste Was Electrode of SolderComponents Thickness (mm) Paste (%) Applied (° C.) (ml) Burst (%) (%)Example 4 0.92 82 450 5.23 × 10⁻⁷ 0 0 0.46 0.46 Example 5 0.92 79 5506.47 × 10⁻⁷ 0 0 0.46 0.46 Example 6 1.12 60 450 2.53 × 10⁻⁶ 11 0 0.660.66 Comparative 0.92 85 450 3.39 × 10⁻⁷ 0 15 Example 3 0.46 0.46Comparative 0.87 46 550 2.64 × 10⁻⁶ 21 0 Example 4 0.41 0.41

As shown in Table 2, in Example 4, an average actually measured value ofan outer dimension of the stack was about 0.92 mm long, about 0.46 mmwide, and about 0.46 mm thick. A volume occupied by the resin componentin the inner external electrode was about 5.23×10⁻⁷ ml. An incidence ofsolder burst was 0%. A ratio of detached ceramic electronic componentswas 0%.

In Example 5, an average actually measured value of an outer dimensionof the stack was about 0.92 mm long, about 0.46 mm wide, and about 0.46mm thick. A volume occupied by the resin component in the inner externalelectrode was about 6.47×10⁻⁷ ml. An incidence of solder burst was 0%. Aratio of detached ceramic electronic components was 0%.

In Example 6, an average actually measured value of an outer dimensionof the stack was about 1.12 mm long, about 0.66 mm wide, and about 0.66mm thick. A volume occupied by the resin component in the inner externalelectrode was about 2.53×10⁻⁶ ml. An incidence of solder burst was about11%. A ratio of detached ceramic electronic components was 0%.

In Comparative Example 3, an average actually measured value of an outerdimension of the stack was 0.92 mm long, 0.46 mm wide, and 0.46 mmthick. A volume occupied by the resin component in the inner externalelectrode was 3.39×10⁻⁷ ml. An incidence of solder burst was 0%. A ratioof detached ceramic electronic components was 15%.

In Comparative Example 4, an average actually measured value of an outerdimension of the stack was 0.87 mm long, 0.41 mm wide, and 0.41 mmthick. A volume occupied by the resin component in the inner externalelectrode was 2.64×10⁻⁶ ml. An incidence of solder burst was 21%. Aratio of detached ceramic electronic components was 0%.

In the present experimental example as well, it was confirmed that anincidence of solder burst lowered as a volume occupied by the resincomponent in the inner external electrode was smaller. Detachment of aceramic electronic component from a mounting board due to a shock wasobserved when a volume occupied by the resin component in the innerexternal electrode was too small.

In a ceramic electronic component having an outer dimension of a lengthnot smaller than about 0.95 mm and not greater than about 1.20 mm, awidth not smaller than about 0.45 mm and not greater than about 0.70 mm,and a thickness not smaller than about 0.45 mm and not greater thanabout 0.70 mm, it could be confirmed that a ratio of detached ceramicelectronic components could be 0% while an incidence of solder burst wasnot higher than about 15%, by setting a volume occupied by the resincomponent in the inner external electrode to be not lower than about5.23×10⁻⁷ ml and not higher than about 2.53×10⁻⁶ ml.

Third Experimental Example

Five hundred ceramic electronic components each having an outerdimension of a length not smaller than about 1.5 mm and not greater thanabout 1.8 mm, a width not smaller than about 0.7 mm and not greater thanabout 1.0 mm, and a thickness not smaller than about 0.7 mm and notgreater than about 1.0 mm were fabricated and subjected to anexperiment.

Initially, features and conditions common in fabrication of each ceramicelectronic component will be described. BaTiO₃ was used as a materialfor forming a ceramic layer. Ni was used as a material forming aninternal electrode.

A first metal filler was composed of Sn and a second metal filler wascomposed of Ag. An epoxy resin was used as a resin component. A weightratio between the first metal filler and the second metal filler in amixture paste was set to about 3:7. The stack to which the mixture pastehad been applied was heated in a nitrogen gas atmosphere for 20 minutes.

A thickness of an inner external electrode was not smaller than about 20μm and not greater than about 30 μm. An outer external electrode wasformed from a Ni plating film having a thickness not smaller than about2 μm and not greater than about 3.5 μm. A surface external electrode wasformed from a Sn plating film having a thickness not smaller than about2 μm and not greater than about 3 μm.

In Example 7, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 79 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 550° C.

In Example 8, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to about 71 volume % anda temperature for heating stack 110 to which the mixture paste had beenapplied being set to about 550° C.

In Example 9, 100 ceramic electronic components were fabricated, with avolume ratio (a content) of the first metal filler and the second metalfiller in total in the mixture paste being set to 79 volume % and atemperature for heating stack 110 to which the mixture paste had beenapplied being set to 450° C.

In Comparative Example 5, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set toabout 82 volume % and a temperature for heating stack 110 to which themixture paste had been applied being set to about 450° C.

In Comparative Example 6, 100 ceramic electronic components werefabricated, with a volume ratio (a content) of the first metal fillerand the second metal filler in total in the mixture paste being set toabout 71 volume % and a temperature for heating stack 110 to which themixture paste had been applied being set to about 450° C.

In 100 ceramic electronic components fabricated in each of Examples 7 to9 and Comparative Examples 5 and 6, an average actually measured valueof an outer dimension of the stack, a volume occupied by the resincomponent in the inner external electrode, an incidence of solder burst,and a ratio of ceramic electronic components detached from a mountingboard due to a shock were calculated.

Table 3 summarizes results of experiments in Examples 7 to 9 andComparative Examples 5 and 6.

TABLE 3 Average Actually Measured Volume Ratio Volume Value of of FirstTemperature Occupied Outer Metal Filler for Heating by Resin Ratio ofDimension and Second Stack to Component Detached of Stack Metal FillerWhich in Inner Incidence Ceramic Length (mm) in total Mixture Externalof Solder Electronic Width (mm) in Mixture Paste Was Electrode BurstComponent Thickness (mm) Paste (%) Applied (° C.) (ml) (%) (%) Example 71.50 79 550 1.94 × 10⁻⁶ 13 0 0.75 0.75 Example 8 1.40 71 550 2.44 × 10⁻⁶10 0 0.65 0.65 Example 9 1.70 79 450 2.84 × 10⁻⁶ 14 0 0.95 0.95Comparative 1.50 82 450 1.60 × 10⁻⁶ 7 20 Example 5 0.75 0.75 Comparative1.50 71 450 4.23 × 10⁻⁶ 58 0 Example 6 0.75 0.75

As shown in Table 3, in Example 7, an average actually measured value ofan outer dimension of the stack was about 1.50 mm long, about 0.75 mmwide, and about 0.75 mm thick. A volume occupied by the resin componentin the inner external electrode was about 1.94×10⁻⁶ ml. An incidence ofsolder burst was about 13%. A ratio of detached ceramic electroniccomponents was 0%.

In Example 8, an average actually measured value of an outer dimensionof the stack was about 1.40 mm long, about 0.65 mm wide, and about 0.65mm thick. A volume occupied by the resin component in the inner externalelectrode was about 2.44×10⁻⁶ ml. An incidence of solder burst was about10%. A ratio of detached ceramic electronic components was 0%.

In Example 9, an average actually measured value of an outer dimensionof the stack was about 1.70 mm long, about 0.95 mm wide, and about 0.95mm thick. A volume occupied by the resin component in the inner externalelectrode was about 2.84×10⁻⁶ ml. An incidence of solder burst was about14%. A ratio of detached ceramic electronic components was 0%.

In Comparative Example 5, an average actually measured value of an outerdimension of the stack was 1.50 mm long, 0.75 mm wide, and 0.75 mmthick. A volume occupied by the resin component in the inner externalelectrode was 1.60×10⁻⁶ ml. An incidence of solder burst was 7%. A ratioof detached ceramic electronic components was 20%.

In Comparative Example 6, an average actually measured value of an outerdimension of the stack was 1.50 mm long, 0.75 mm wide, and 0.75 mmthick. A volume occupied by the resin component in the inner externalelectrode was 4.23×10⁻⁶ ml. An incidence of solder burst was 58%. Aratio of detached ceramic electronic components was 0%.

In the present experimental example as well, it was confirmed that anincidence of solder burst lowered as a volume occupied by the resincomponent in the inner external electrode was smaller. Detachment of aceramic electronic component from a mounting board due to a shock wasobserved when a volume occupied by the resin component in the innerexternal electrode was too small.

In a ceramic electronic component preferably having an outer dimensionof a length not smaller than about 1.5 mm and not greater than about 1.8mm, a width not smaller than about 0.7 mm and not greater than about 1.0mm, and a thickness not smaller than about 0.7 mm and not greater thanabout 1.0 mm, it could be confirmed that a ratio of detached ceramicelectronic components could be 0% while an incidence of solder burst wasnot higher than about 15%, by setting a volume occupied by the resincomponent in the inner external electrode to be not lower than about1.94×10⁻⁶ ml and not higher than about 2.84×10⁻⁶ ml, for example.

It was also confirmed that, in a case that a temperature for heatingstack 110 to which the mixture paste had been applied was set to about800° C., the resin component was not substantially contained in theformed inner external electrode. This may be because the resin componentwas released from the mixture paste and disappeared.

From the experimental results above, it was confirmed that occurrence ofsolder burst was significantly reduced or prevented while a function ofthe inner external electrode as a buffer layer was maintained, byproviding in the inner external electrode, the resin component in anamount within a prescribed range.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A method of manufacturing a ceramic electronic component having an outer dimension of a length not smaller than about 0.57 mm and not greater than about 0.65 mm, a width not smaller than about 0.27 mm and not greater than about 0.35 mm, and a thickness not smaller than about 0.27 mm and not greater than about 0.35 mm, the method comprising the steps of: preparing a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked; and providing an external electrode on a portion of a surface of the stack so as to electrically be connected to the internal electrode; wherein the step of providing an external electrode includes the steps of providing an inner external electrode by applying a mixture of a resin component and a metal component so as to cover a portion of the surface of the stack and heating the stack onto which the mixture has been applied and providing an outer external electrode by plating the inner external electrode with a metal component so as to cover the inner external electrode; and the metal component of the inner external electrode includes a first metal component and a second metal component higher in melting point than the first metal components.
 2. A method of manufacturing a ceramic electronic component having an outer dimension of a length not smaller than about 0.95 mm and not greater than about 1.20 mm, a width not smaller than about 0.45 mm and not greater than about 0.70 mm, and a thickness not smaller than about 0.45 mm and not greater than about 0.70 mm, the method comprising the steps of: preparing a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked; and providing an external electrode on a portion of a surface of the stack so as to electrically be connected to the internal electrode; wherein the step of providing an external electrode includes the steps of providing an inner external electrode by applying a mixture of a resin component and a metal component so as to cover a portion of the surface of the stack and heating the stack onto which the mixture has been applied and providing an outer external electrode by plating the inner external electrode with a metal component so as to cover the inner external electrode; and the metal component of the inner external electrode includes a first metal component and a second metal component higher in melting point than the first metal component.
 3. A method of manufacturing a ceramic electronic component having an outer dimension of a length not smaller than about 1.5 mm and not greater than about 1.8 mm, a width not smaller than about 0.7 mm and not greater than about 1.0 mm, and a thickness not smaller than about 0.7 mm and not greater than about 1.0 mm, the method comprising the steps of: preparing a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked; and providing an external electrode on a portion of a surface of the stack so as to electrically be connected to the internal electrode; wherein the step of providing an external electrode includes the steps of providing an inner external electrode by applying a mixture of a resin component and a metal component so as to cover a portion of the surface of the stack and heating the stack onto which the mixture has been applied and providing an outer external electrode by plating the inner external electrode with a metal component so as to cover the inner external electrode; and the metal component of the inner external electrode includes a first metal component and a second metal component higher in melting point than the first metal component.
 4. The method of manufacturing a ceramic electronic component according to claim 1, wherein the first metal component is Sn.
 5. The method of manufacturing a ceramic electronic component according to claim 1, wherein the second metal component is Ag or Cu.
 6. The method of manufacturing a ceramic electronic component according to claim 1, wherein the metal component of the outer external electrode is Ni.
 7. The method of manufacturing a ceramic electronic component according to claim 1, wherein a temperature for heating the stack in the step of providing an inner external electrode is not lower than about 450° C.
 8. The method of manufacturing a ceramic electronic component according to claim 1, wherein in the step of providing an inner external electrode, the stack is heated in an atmosphere in which a concentration of oxygen is not higher than about 100 ppm. 